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半導體線寬製程控制: 以高密度電漿乾蝕刻底部抗反射塗佈層控制線寬的方法方法!可以縮小線寬1/4甚至達1/10，這也就是使用193奈米曝光機，作7奈米的重要方法之一!
實施多次上述的方法，可以提高多倍的解析度!但是良率(yield rate)也會降低很多!
這就是使用193奈米曝光機，作7奈米不如EUV的結果!
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